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    Data Sheet www.rohm.com ? 2011 ROHM Co., Ltd. All rights reserved. Super Fast Recovery Diode RFUS20NS4S lSeries lDimensions (Unit : mm) lLand size figure (Unit : mm) Ultra Fast Recovery lApplications General rectification lFeatures 1)Ultra low switching loss 2)High current overload capacity lStructure 3)Cathode common single type lConstruction Silicon epitaxial planer lAbsolute maximum ratings (Tc=25 ?C) Symbol Limits Unit VRM 430 V VR 430 V Io Tc=47°C 20 A Tj 150 ?C Tstg -55 to +150 ?C lElectrical characteristics (Tj=25 ?C) Symbol Min. Typ. Max. Unit Forward voltage VF － 1.4 1.6 V IR － 0.06 10 μA trr － 24 35 ns Thermal resistance (*) Rth(j-c) － － 2.5 °C/W (*) Design assurance without measurement. Forward current surge peak IFSM Reverse voltage Average rectified forward current lTaping dimensions (Unit : mm) Parameter Repetitive peak reverse voltage Conditions Reverse recovery time (*) Reverse current Parameter Junction temperature Storage temperature junction to case Duty≤0.5 Direct voltage 60Hz half sin wave resistive load , 60Hz half sin wave, Non-repetitive one cycle peak value, Tj=25℃ A Conditions IF=20A VR=430V IF=0.5A,IR=1A,Irr=0.25×IR 100 ROHM : LPDS JEITA : TO263S ① Manufacture Year, Week and Day RFUS20 NS4S ① ① ② ③ 1/4 2011.10 - Rev.A |